Personnel Information

写真a

TAMAMURA Koshi


Job title

URA

Graduating School 【 display / non-display

  • Waseda University, Faculty of Science and Engineering, 1981.03, Graduated

Graduate School 【 display / non-display

  • Waseda University, Graduate School, Division of Electro Communications, semiconductor , Master's Course, 1983.03, Completed

Campus Career 【 display / non-display

  • 2014.05
    -
    2016.02
    Tokyo Medical and Dental University, Research University Promotion Organization, Research Administration Division, Project Associate Professor
  • 2014.05
    -
    2020.03
    Tokyo Medical and Dental University, Research University Promotion Organization, Research Administration Division, URA
  • 2020.04
    -
    Now
    Tokyo Medical and Dental University, Research University Promotion Organization, Research Administration Division, URA
 

Published Papers & Misc 【 display / non-display

  • Jun-ichi Kasai, Ryouichi Akimoto, Haruhiko Kuwatsuka, Toshifumi Hasama, Hiroshi Ishikawa, Sumiko Fujisaki, Takeshi Kikawa, Sigehisa Tanaka, Shinji Tsuki, Hiroshi Nakajima, Kunihiko Tasai, Yoshiro Takiguchi, Tsunenori asatsuma, Koshi Tamamura. 545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low threshold Cureent Density Applied Physics Express. 2010.09; 3 (9): 091201.

  • Hironori Tsukamoto, Kohshi Tamamura, Masaharu Nagai, Futoshi Hiei, Masao Ikeda. Optical characteristics of ZnCdSe/ZnSSe single quantum wells Journal of Crystal Growth. 1998.08; 191 (4): 679-684.

  • Hironori Tsukamoto, Masaharu Nagai, Eisaku Katoh, Kohshi Tamamura, Akira Ishibashi, Masao Ikeda. ZnSe nitrogen doping using an ion-free electron-cyclotron-resonance plasma beam Appl.Phys.Lett.. 1997; 70 1453.

  • K.Tamamura, K.Akimoto, Y.Mori. Silicon growth on germanium substrates by electron cyclotron resonance plasma excitation Journal of Crystal Growth. 1990.03; 100 (3): 643-645.

  • K.Tamamura, K.Akimoto, Y.Mori. Dislocation density of lattice mismatched epitaxial layers Journal of Crystal Growth. 1989.04; 94 (4): 821-826.

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Patents 【 display / non-display

  • USA

    Application Number: 13/902199

  • CHN

    Announcement Number: CN 103565412 A

  • USA

    Announcement Number: 20140031699

  • CHN

    Announcement Number: CN103445877

  • CHN

    Announcement Number: CN 103445761 A

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