Details of a Researcher

Personnel Information

写真a

TAMAMURA Koshi

Job title

URA

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Graduating School 【 display / non-display 】

Waseda University, Faculty of Science and Engineering, 1981.03, Graduated

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Graduate School 【 display / non-display 】

Waseda University, Graduate School, Division of Electro Communications, semiconductor , Master's Course, 1983.03, Completed

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Campus Career 【 display / non-display 】

2014.05

-

2016.02

Tokyo Medical and Dental University， Research University Promotion Organization， Research Administration Division， Project Associate Professor
2014.05

-

2020.03

Tokyo Medical and Dental University， Research University Promotion Organization， Research Administration Division， URA
2020.04

-

2023.04

Tokyo Medical and Dental University， Research University Promotion Organization， Research Administration Division， URA
2023.05

-

Now

Tokyo Medical and Dental University， Institute of Research， Young Investigator Support Center， URA

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Published Papers & Misc 【 display / non-display 】

Jun-ichi Kasai, Ryouichi Akimoto, Haruhiko Kuwatsuka, Toshifumi Hasama, Hiroshi Ishikawa, Sumiko Fujisaki, Takeshi Kikawa, Sigehisa Tanaka, Shinji Tsuki, Hiroshi Nakajima, Kunihiko Tasai, Yoshiro Takiguchi, Tsunenori asatsuma, Koshi Tamamura. 545 nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low threshold Cureent Density Applied Physics Express. 2010.09; 3 (9): 091201.
Hironori Tsukamoto, Kohshi Tamamura, Masaharu Nagai, Futoshi Hiei, Masao Ikeda. Optical characteristics of ZnCdSe/ZnSSe single quantum wells Journal of Crystal Growth. 1998.08; 191 (4): 679-684.
Hironori Tsukamoto, Masaharu Nagai, Eisaku Katoh, Kohshi Tamamura, Akira Ishibashi, Masao Ikeda. ZnSe nitrogen doping using an ion-free electron-cyclotron-resonance plasma beam Appl.Phys.Lett.. 1997; 70 1453.
K.Tamamura, K.Akimoto, Y.Mori. Silicon growth on germanium substrates by electron cyclotron resonance plasma excitation Journal of Crystal Growth. 1990.03; 100 (3): 643-645.
K.Tamamura, K.Akimoto, Y.Mori. Dislocation density of lattice mismatched epitaxial layers Journal of Crystal Growth. 1989.04; 94 (4): 821-826.
K.Tamamura,K.Akimoto,Y.Mori. Coherent Si growth on GaAs substrates by vapor phase deposition Applied Physics Letter. 1989; 54 347.
Junko ogawa, Kohshi Tamamura, Katsuhiro Akimoto, Yoshifumi Mori . Photoluminescence spectra of highly doped AlxGa1-xAs grown by molecular-beam epitaxy J.Appl.Phys.. 1988; 63 2765.
Katsuhiro Akimoto, Koshi Tamamura, Junko Ogawa, Yoshifumi Mori, Chiaki Kojima. Photoluminescence study on the interface of a GaAs/AlxGa1-xAs heterostructure grown by metalorganic chemical vapor deposition J.Appl.Phys.. 1988; 63 460.
S.Hirata, K.Tamamura, C.Kojima. λ/4-shifted AlGaAs/GaAs DFB lasers with double window Electronics Letters. 1987.06; 23 (12): 627-628.
K.Tamamura, J.Ogawa, K.Akimoto, Y.Mori, C.Kojima. Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100),(311)A, and (311)B oriented GaAs substrates Appl.Phys.Lett.. 1987; 50 1149.
Junko ogawa, Kohshi Tamamura, Katsuhiro Akimoto, Yoshifumi Mori . Degradation in GaAs/AlGaAs double-heterostructure light-emitting diodes Appl.Phys.Lett.. 1987; 51 1949.
Shoji Hirata, Koshi Tamamura, Yoshifumi Mori, C Kojima. AlGaAs/GaAs distributed feedback lasers with first-order grating fabricated by metalorganic chemical vapor deposition Appl.Phys.Lett.. 1987; 51 63.
T.Ohata, K.Honda, S.Hirata, K.Tamamura, H.Ishikawa, K.Miyahara, Y.Mori C.Kojima. AlGaAs/GaAs distributed feedback laser diodes grown by MOCVD Journal of Crystal Growth. 1986.09; 77 637-642.
S.Hirata, K.Honda, T.Ohata, K.Miyahara, K.Tamamura, H.Ishikawa, Y.Mori, C.Kojima. Low-threshold AlGaAs/GaAs distributed feedback lasers fabricated by MOCVD Electronics Letters. 1986.09; 22 (19): 1023-1024.
K.Tamamura, T.Ohhata, H.Kawai C.Kojima. Magnesium doping of (Al,Ga)As in metalorganic chemical vapor deposition J.Appl.Phys.. 1986; 59 3549.
Hideki Gotoh, Kiyoshi Sasamoto, Shigeru Kuroda, Tohru Yamamoto, Koshi Tamamura, Masayuki Fukushima, Morihiko Kimata. S doping of MBE-GaSb with H2S Gas Japanese Journal of Applied Physics . 1981; 20 L893-L896.